film oxide resistor
常见例句
- As a result, the resistance of the oxide semiconductor layer 905 used for the resistor 354 is made lower than that of the oxide semiconductor layer 906 used for the thin film transistor 355.
其结果，用作电阻元件（354）的氧化物半导体层（905）的电阻值低于用作薄膜晶体管（355）的氧化物半导体层（906）的电阻值。
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